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and SHH have approved the final manuscript. All authors read and approved the final manuscript.”
“Background In the past decade, gallium oxide (Ga2O3), as a large-bandgap (approximately 4.9 eV) semiconductor, has attracted extensive attention in the area of insulating oxides for the metal-oxide-semiconductor (MOS) technology as well as the active materials for the solar-blind deep ultraviolet detectors [1–6]. In particular, when high-mobility III-V 4-Aminobutyrate aminotransferase compound semiconductor nanomaterials, such as GaAs, InAs, GaSb, and InSb nanowires (NWs), have been successfully illustrated with their great technological potentials in next-generation electronics [7–9], Ga2O3-based gate dielectrics are of significant importance to be achieved and to outperform the conventional silicon technology, due to their excellent stability and relatively high dielectric constant (approximately 14.2) as compared to that of SiO2 (approximately 3.9) or even the typically used high-κ Al2O3 (approximately 8) [1, 10]. Till now, there are several effective integrations of Ga2O3-based gate dielectrics demonstrated in thin-film III-V field-effect transistors (FETs).