J Polym Sci Part A: Polym Chem Selleckchem Tipifarnib 2012, 50:4423–4432. 10.1002/pola.Raf inhibitor 26264CrossRef
19. Fang M, Wang K, Lu H, Yang Y, Nutt S: Covalent polymer functionalization of graphene nanosheets and mechanical properties of composites. J Mater Chem 2009, 19:7098–7105. 10.1039/b908220dCrossRef 20. Fang M, Wang K, Lu H, Yang Y, Nutt S: Single-layer graphene nanosheets with controlled grafting of polymer chains. J Mater Chem 2010, 20:1982–1992. 21. Kumar M, Chung JS, Kong BS, Kim EJ, Hur SH: Synthesis of graphene-polyurethane nanocomposite using highly functionalized graphene oxide as pseudo-crosslinker. Mat Lett 2013, 106:319–321.CrossRef 22. Liu J, Chen G, Jiang M: Supramolecular hybrid hydrogels from noncovalently functionalized graphene with block copolymers. Macromolecules 2011, 44:7682–7691. 10.1021/ma201620wCrossRef 23. Goncalves G, Marques PAAP, Barros-Timmons A, Bdkin I, Singh MK, Emami N, Gracio J: Graphene oxide modified with PMMA via ATRP as a reinforcement filler. J Mater Chem 2010, 20:9927–9934. 10.1039/c0jm01674hCrossRef 24. Kumar M, Kannan T: A novel tertiary bromine-functionalized thermal iniferter for controlled radical
polymerization. Polym J 2010, 42:916–922. 10.1038/pj.2010.92CrossRef 25. Qin DQ, Qin SH, Chen XP, Qiu KY: Living controlled radical polymerization of methyl methacrylate by reverse ATRP with DCDPS/FeCl3/PPh3 initiating system. Polymer 2000, 41:7347–7352. 10.1016/S0032-3861(00)00105-1CrossRef check details Competing interests The authors declare that they have no competing interests. Authors’ contributions MK has designed all the conducted experiments and characterization for final publication. JSC
and SHH have approved the final manuscript. All authors read and approved the final manuscript.”
“Background In the past decade, gallium oxide (Ga2O3), as a large-bandgap (approximately 4.9 eV) semiconductor, has attracted extensive attention in the area of insulating oxides for the metal-oxide-semiconductor (MOS) technology as well as the active materials for the solar-blind deep ultraviolet detectors [1–6]. In particular, when high-mobility III-V 4-Aminobutyrate aminotransferase compound semiconductor nanomaterials, such as GaAs, InAs, GaSb, and InSb nanowires (NWs), have been successfully illustrated with their great technological potentials in next-generation electronics [7–9], Ga2O3-based gate dielectrics are of significant importance to be achieved and to outperform the conventional silicon technology, due to their excellent stability and relatively high dielectric constant (approximately 14.2) as compared to that of SiO2 (approximately 3.9) or even the typically used high-κ Al2O3 (approximately 8) [1, 10]. Till now, there are several effective integrations of Ga2O3-based gate dielectrics demonstrated in thin-film III-V field-effect transistors (FETs).