CrossRef 16. Horcas I, Fernandez R, Gomez-Rodriguez JM, Colchero J, Gomez-Herrero J, Baro AM: WSxM: A software for scanning probe microscopy and a tool for nanotechnology. Rev Sci Instrum 2007, 78:013705.CrossRef 17. Murarka SP: Silicides for VLSI Applications. New York: Academic; 1983. 18. Samsonov GV, Dvorina LA, Rud’ BM: Silicides. Moscow: Metallurgia; 1979. [in Russian] 19. Colgan EG, Gambino JP, Hong QZ: Formation and see more stability of silicides on polycrystalline silicon. Mater Sci Eng 1996,
R16:43–96. 20. Chang YJ, Erskine JL: Diffusion layers and the Schottky-barrier height in nickel–silicon interfaces. Phys Rev B 1983,28(10):5766–5773.CrossRef 21. Sze SM: Physics of Semiconductor Devices. New York: Wiley; 1981. 22. Grunthaner PJ, Grunthaner FJ, Scott DM, Nicolet MA, Mayer JW: Oxygen impurity effects at metal/silicide interfaces: formation of silicon oxide and suboxides in the Ni/Si system. J Vac Sci Technol 1981,19(3):641–648.CrossRef 23. Chang YJ, Erskine JL: Diffusion layers of Ni on Si(100). Phys Rev B 1982,26(8):4766–4769.CrossRef 24. Mataré HF: Defect Electronics in Semiconductors. New York: Wiley; 1971. 25.
Shannon JM: Control of Schottky barrier height using highly doped surface layers. Solid State MK-2206 Electron 1976, 19:537.CrossRef 26. Shannon JM: Increasing the effective height of a Schottky barrier using low-energy ion implantation. Appl Phys Lett 1974, 25:75.CrossRef 27. Guliants EA, Ji C, Song YJ, Anderson WA: A 0.5-μm-thick polycrystalline silicon Schottky diode with rectification ratio of 106. Appl Phys Lett 2002,80(8):1474.CrossRef 28. Wong M: Metal-induced laterally crystallized polycrystalline silicon: technology, material and devices. Proc SPIE 2000, 4079:28–42.CrossRef 29. Miyasaka M, Makihira K, Asano T, Pécz B, Stoemenos J: Structural properties of nickel-metal-induced laterally crystallized silicon films. Solid State Phenomena 2003, 93:213–218.CrossRef
30. Hwang JD, Lee KS: A high rectification ratio nanocrystalline p-n junction diode prepared by metal-induced lateral crystallization for solar cell applications. J Electrochem Soc 2008,155(4):H259-H262.CrossRef Competing interests The authors declare that they have no competing interests. Authors’ contributions KVC participated in the design of the study, carried out the Methocarbamol experiments, performed data analysis, and participated in the discussions and interpretation of the results. VAC participated in the design of the study and took part in the discussions and interpretation of the results; he also supervised the research performed by young scientists and students. VPK participated in the design of the study and took part in the discussions and interpretation of the results. VYR performed the TEM studies and took part in the discussions and interpretation of the results. MSS investigated the photo-emf spectra; he carried out the experiments, performed data analysis, and took part in the discussions and interpretation of the results.